Quantum confinement in Si and Ge nanostructures
نویسندگان
چکیده
منابع مشابه
Photoemission Studies of Si Quantum Dots with Ge Core: Dots formation, Intermixing at Si-clad/Ge-core interface and Quantum Confinement Effect
Spherical Si nanocrystallites with Ge core (~20nm in average dot diameter) have been prepared by controlling selective growth conditions of lowpressure chemical vapor deposition (LPCVD) on ultrathin SiO2 using alternately pure SiH4 and 5% GeH4 diluted with He. XPS results confirm the highly selective growth of Ge on the pregrown Si dots and subsequently complete coverage by Si selective growth ...
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A discussion of the limitations of Raman scattering as applied to Ge/Si nanostructures is followed by a summary of our recent efforts to investigate the local structure of various Ge nanostructures, namely, Ge quantum dots MBE grown on bare Si(1 0 0), on Si(1 1 1) with a 0.3 nm SiO2 coverage, and nanocrystals embedded in SiO2, by X-ray absorption fine structure spectroscopy. For the latter case...
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ژورنال
عنوان ژورنال: Journal of Applied Physics
سال: 2012
ISSN: 0021-8979,1089-7550
DOI: 10.1063/1.3680884